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PDF MUBW15-12A6K Data sheet ( Hoja de datos )
| Número de pieza | MUBW15-12A6K | |
| Descripción | Converter - Brake - Inverter Module | |
| Fabricantes | IXYS Corporation | |
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MUBW 15-12A6K
Converter - Brake - Inverter Module (CBI1)
NPT IGBT
www.DataSheet4U.com
Three Phase
Rectifier
VRRM = 1600V
IDAVM25 = 130 A
IFSM = 300 A
Brake Chopper
VCES = 1200 V
IC25 = 19 A
VCE(sat)= 2.9 V
Three Phase
Inverter
VCES = 1200 V
IC25 = 19 A
VCE(sat)= 2.9 V
Input Rectifier Bridge D8 - D13
Symbol
VRRM
IFAV
IDAVM
IFSM
Ptot
Conditions
Maximum Ratings
1600
V
TC = 80°C; sine 180°
bridge output current; TC = 80°C; rectangular; d = 1/3
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
31
89
320
80
A
A
A
W
Symbol
Conditions
V
F
IR
RthJC
RthCH
I
F
=
30
A;
TVJ
=
25°C
TVJ = 125°C
VR = VRRM; TVJ = 25°C
TVJ = 125°C
(per diode)
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
1.0 1.35 V
1.1 V
0.02 mA
0.4 mA
0.45
1.4 K/W
K/W
Application: AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
• asynchronous motor
• electric braking operation
• UL registered E72873
Features
• High level of integration - only one power
semiconductor module required for the
whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-8
1 page  
MUBW 15-12A6K
Input Rectifier Bridge D8 - D13
80
A
60
IF
TVJ = 125°C
TVJ = 25°C
40
www.DataSheet4U.com
20
200
A
150
IFSM
100
50
TVJ= 45°C
TVJ= 150°C
103
A2s
I2t
TVJ= 45°C
TVJ= 150°C
0
0.0 0.6 1.2 1.8 V 2.4
VF
Fig. 1 Forward current versus
voltage drop per diode
160
W
120
Ptot
80
40
50Hz, 80% VRRM
0
0.001
0.01
0.1 s
t
1
Fig. 2 Surge overload current
RthA:
0.2 K/W
0.5 K/W
0.8 K/W
1.5 K/W
3 K/W
5 K/W
8 K/W
102
1
2 3 4 5 6 7m8s 910
t
Fig. 3 I2t versus time per diode
100
A
ID(AV8) 0
60
40
20
0
0 20 40 60 80 A 0 20 40 60
ID(AV)M
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sin 180°
80 100 120 140 °C
Tamb
1.6
K/W
1.2
ZthJC
0.8
0
0 20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current
versus case temperature
0.4
0.0
0.001
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
1
© 2005 IXYS All rights reserved
MUBW 15-12A6K
s 10
t
5-8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUBW15-12A6K.PDF ] | |
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