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PDF STD3NC60-1 Data sheet ( Hoja de datos )
| Número de pieza | STD3NC60-1 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD3NC60
STD3NC60-1
N-CHANNEL 600V - 1.8Ω - 3.2A DPAK / IPAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STD3NC60
www.DataSheet4U.cSoTmD3NC60-1
600V
600V
< 2.2Ω
< 2.2Ω
3.2A
3.2A
s TYPICAL RDS(on) = 1.8Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (SMD PACKAGE)
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
3
1
DPAK
No Suffix
3
2
1
IPAK
(Suffix”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(1)ISD ≤3.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
August 2002
Value
600
600
±30
3.2
2
12.8
50
0.4
3.5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/10
1 page  
STD3NC60 - STD3NC60-1
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet STD3NC60-1.PDF ] | |
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