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PDF MB10S Data sheet ( Hoja de datos )
| Número de pieza | MB10S | |
| Descripción | SILICON BRIDGE RECTIFIERS | |
| Fabricantes | Galaxy Semi-Conductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MB10S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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BL GALAXY ELECTRICAL
TRANSIENT VOLTAGE SUPPRESSOR
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
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Fast response time: typically less than 1.0ps from 0 Volts to
V(BR) for uni-directional and 5.0ns for bi-directional types
For devices with V(BR) 10V,ID are typically les s than 1.0μA
High tem perature soldering guaranteed:265 / 10 seconds,
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-201AE, molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Weight: 0.032 ounces, 0.9 grams
Mounting position: Any
1N6267---1N6303A
BREAKDOWN VOLTAGE: 6.8 --- 200 V
PEAK PULSE POWER: 1500 W
DO-201AE
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
PPPM
Minimum 1500
W
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
IPPM SEE TABLE 1 A
Steady state pow er dissipation at TL=75
fffff lead lengths 0.375"(9.5mm) (NOTE 2)
PM(AV)
6.5
W
Peak forw ard surge current, 8.3ms single half
ffffsine-w ave superimposed on rated load (JEDEC Method) (NOTE 3)
IFSM 200.0
A
Maximum instantaneous forw ard voltage at 100 A for unidirectional only (NOTE 4)
VF
3.5/5.0
V
Typical thermal resistance junction-to-lead
RθJL
20
/W
Typical thermal resistance junction-to-ambient
RθJA
75
/W
Operating junction and storage temperature range
TJ, TSTG
-50---+175
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm2) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) VF=3.5 Volt max. for devices of V(BR) 200V, and VF=5.0 Volt max. for devices of V(BR) >200V
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Document Number 0285011
BLGALAXY ELECTRICAL
1.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MB10S.PDF ] | |
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