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PDF P0903BI Data sheet ( Hoja de datos )
| Número de pieza | P0903BI | |
| Descripción | N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko | |
| Logotipo |  |
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NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P0903BI
TO-251
Lead-Free
D
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 9.5m
ID
50A
G
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
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PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current1
IDM
Avalanche Current
IAR
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
EAS
EAR
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
50
35
200
40
250
8.6
50
30
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle ≤ 1
TYPICAL
0.6
MAXIMUM
2.5
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TC = 125 °C
LIMITS
UNIT
MIN TYP MAX
25
1 1.6
3
V
±250 nA
25
µA
250
1 Mar-07-2005
1 page  
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
TO-251 (IPAK) MECHANICAL DATA
P0903BI
TO-251
Lead-Free
Dimension
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B
C
D
E
F
G
Min.
13.7
2.2
0.4
0.4
0.9
7.0
5.4
mm
Dimension
Typ. Max.
Min.
15.3 H 1.4
2.4 I 6.4
0.6 J 5.2
0.6 K 0.6
1.5 L 0.4
8.0 M
5.8 N
mm
Typ. Max.
2
6.8
5.5
0.9
0.8
2.3
A
HG
F
5 Mar-07-2005
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet P0903BI.PDF ] | |
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