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Número de pieza | 2SC4551 | |
Descripción | NPN Silicon Transistor | |
Fabricantes | NEC | |
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No Preview Available ! DATA SHEET
SILICON POWER TRANSISTOR
2SC4551
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4551 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
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ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 2 A)
VCE(sat) ≤ 0.3 V (IC = 6 A, IB = 0.3 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
100
60
7.0
10
20
5.0
30
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15597EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page [MEMO]
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2SC4551
Data Sheet D15597EJ2V0DS
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet 2SC4551.PDF ] |
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