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PDF AP4412GM Data sheet ( Hoja de datos )
| Número de pieza | AP4412GM | |
| Descripción | ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP4412GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Simple Drive Requirement
www.DataSheet4▼U.coFmast Switching
▼ RoHS Compliant
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
25V
33mΩ
7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
25
±20
7
5.8
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
50
Unit
℃/W
Data and specifications subject to change without notice
200415051-1/6
1 page  
AP4412GM
16
I D =7A
14
V DS =16V
12
www.DataSheet4U.com10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100 3
10
Tj=150 o C
1
Tj=25 o C
2
1
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP4412GM.PDF ] | |
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