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STPR1020CG PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 STPR1020CG
기능 ULTRA-FAST RECOVERY RECTIFIER DIODES
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STPR1020CG 데이터시트, 핀배열, 회로
® STPR1020CB/CG/CT/CF/CFP/CR
ULTRA-FAST RECOVERY RECTIFIER DIODES
MAIN PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
trr (max)
2x5A
200 V
150°C
0.99 V
30 ns
FEATURES
s SUITED FOR SMPS
s LOW LOSSES
s LOW FORWARD AND REVERSE RECOVERY
TIME
s HIGH SURGE CURRENT CAPABILITY
s INSULATED PACKAGES: ISOWATT220AB /
TO-220FPAB
Insulation Voltage = 2000V DC
Capacitance = 12 pF
A1
K
A2
A2
K
A1
TO-220AB
STPR1020CT
A2
A1 K
ISOWATT220AB
STPR1020CF
A2
K
A1
TO-220FPAB
STPR1020CFP
K
K A2
A1
DPAK
STPR1020CB
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in DPAK, D2PAK, I2PAK, TO-220AB,
TO-220FPAB or ISOWATT220AB, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM (limiting values, per diode)
K
A2
A1
D2PAK
STPR1020CG
A2
K
A1
I2PAK
STPR1020CR
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
Tstg
Parameter
Repetitive peak reverse voltage
RMS forward
current
D2PAK / TO-220AB / ISOWATT220AB /
TO-220FPAB / I2PAK
DPAK
Average forward D2PAK / DPAK
current
TO-220AB / I2PAK
δ = 0.5
ISOWATT220AB
Tc=125°C Per diode
Tc=115°C Per device
TO-220FPAB
Tc=110°C Per device
Surge non repetitive forward current tp=10ms sinusoidal
Storage temperature range
Value
200
10
Unit
V
A
7A
5A
10
10
50
- 65 to + 150
A
°C
August 2002- Ed: 2E
1/10




STPR1020CG pdf, 반도체, 판매, 대치품
STPR1020CB/CG/CT/CF/CFP/CR
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration
(D2PAK, DPAK, TO-220AB).
IM(A)
50
40
30
20
10 IM
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=25°C
Tc=100°C
1E+0
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1E-3
T
t(s)
δ=tp/T
tp
1E-2
1E-1
1E+0
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.1
1E-2
1E-1
T
t(s)
δ=tp/T
tp
1E+0
1E+1
IFM(A)
50.0
10.0
1.0
Tj=125°C
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
Fig. 8: Reverse recovery charges versus dIF/dt
(per diode).
C(pF)
50
40
30
20
10
1
VR(V)
10
F=1MHz
Tj=25°C
Qrr(nC)
200
100
IF=IF(av)
90% confidence
Tj=125°C
50
100 200
20
10
10
20
dIF/dt(A/µs)
50 100
200
500
4/10

4페이지










STPR1020CG 전자부품, 판매, 대치품
PACKAGE MECHANICAL DATA
D2PAK
STPR1020CB/CG/CT/CF/CFP/CR
L2
L
L3
A
E
C2
D
A1
B2
B
G
CR
A2
M*
V2
* FLAT ZONE NO LESS THAN 2mm
REF.
A
A1
A2
B
B2
C
C2
D
E
G
L
L2
L3
M
R
V2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
2.49 2.69 0.098 0.106
0.03 0.23 0.001 0.009
0.70 0.93 0.027 0.037
1.14 1.70 0.045 0.067
0.45 0.60 0.017 0.024
1.23 1.36 0.048 0.054
8.95 9.35 0.352 0.368
10.00 10.40 0.393 0.409
4.88 5.28 0.192 0.208
15.00 15.85 0.590 0.624
1.27 1.40 0.050 0.055
1.40 1.75 0.055 0.069
2.40 3.20 0.094 0.126
0.40 typ.
0.016 typ.
0° 8° 0° 8°
FOOT PRINT (in milliteters)
D2PAK
16.90
10.30
8.90
5.08
1.30
3.70
7/10

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