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PDF H45N03E Data sheet ( Hoja de datos )
| Número de pieza | H45N03E | |
| Descripción | N-Channel Enhancement-Mode MOSFET | |
| Fabricantes | Hi-Sincerity Mocroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de H45N03E (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200518
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H45N03E
N-Channel Enhancement-Mode MOSFET (25V, 45A)
Features
• RDS(on)=15mΩ@VGS=10V, ID=25A
www.DataSh•eReDt4SU(on.c)=o2m0mΩ@VGS=4.5V, ID=25A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H45N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
45
180
60
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H45N03E
HSMC Product Specification
1 page  
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
www.DataSheet4U.com
TP
Ramp-up
tP
TL
Tsmax
tL
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Average ramp-up rate (TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3oC/sec
100oC
150oC
60~120 sec
<3oC/sec
183oC
60~150 sec
240oC +0/-5oC
10~30 sec
<6oC/sec
<6 minutes
Peak temperature
245oC ±5oC
260oC +0/-5oC
H45N03E
Spec. No. : MOS200518
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 5/5
Critical Zone
TL to TP
Pb-Free Assembly
<3oC/sec
150oC
200oC
60~180 sec
<3oC/sec
217oC
60~150 sec
260oC +0/-5oC
20~40 sec
<6oC/sec
<8 minutes
Dipping time
5sec ±1sec
5sec ±1sec
HSMC Product Specification
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet H45N03E.PDF ] | |
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