EM640FU8E Datasheet PDF - Emerging Memory & Logic Solutions
| Part Number | EM640FU8E | |
| Description | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM | |
| Manufacturers | Emerging Memory & Logic Solutions | |
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There is a preview and EM640FU8E download ( pdf file ) link at the bottom of this page. Total 11 Pages | ||
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merging Memory & Logic Solutions Inc.
Document Title
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
EM640FU8E Series
Low Power, 512Kx8 SRAM
Revision History
Revision No. History
0.0 Initial Draft
www.DataShe0e.t14U.com
2’nd Draft Changed Icc, Icc1 value & 55ns product tDW value
Draft Date
Remark
August 5 , 2002
November 11 , 2002
0.2 3’rd Draft tLZ1, tLZ2 value is changed from 5ns to 10ns
March 13 , 2003
tWP value is changed from 55ns to 50ns ( 70ns product )
tWP value is changed from 45ns to 40ns ( 55ns product )
VDR & IDR measurement condition change
Changed ISB1 test conditions
0.3 4’th Draft Add Pb-free part number
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
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merging Memory & Logic Solutions Inc.
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL = 100pF+ 1 TTL
CL1) = 30pF + 1 TTL
1. Including scope and Jig capacitance
2. R1=3070Ω, R2=3150Ω
www.DataShee3t4.UV.cToMm=2.8V
EM640FU8E Series
Low Power, 512Kx8 SRAM
VTM3)
R12)
CL1)
R22)
READ CYCLE (Vcc =2.7 to 3.3V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
Read cycle time
tRC 55 -
Address access time
tAA - 55
Chip select to output
tco1, tco2
- 55
Output enable to valid output
tOE - 30
Chip select to low-Z output
tLZ1, tLZ2
10 -
Output enable to low-Z output
tOLZ
5-
Chip disable to high-Z output
tHZ1, tHZ2
0 20
Output disable to high-Z output
tOHZ
0 20
Output hold from address change
tOH 10 -
70ns
Min Max
70 -
- 70
- 70
- 35
10 -
5-
0 25
0 25
10 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
WRITE CYCLE (Vcc =2.7 to 3.3V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
55ns
Min Max
70ns
Min Max
Write cycle time
tWC 55 - 70 -
Chip select to end of write
tCW1, tCW2 45 - 60 -
Address setup time
tAs 0 - 0 -
Address valid to end of write
tAW 45 - 60 -
Write pulse width
tWP 40 - 50 -
Write recovery time
tWR 0 - 0 -
Write to ouput high-Z
tWHZ
0 20 0 25
Data to write time overlap
tDW 30
30
Data hold from write time
tDH 0 - 0 -
End write to output low-Z
tOW 5 - 5 -
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EM640FU8E electronic component. |
| Information | Total 11 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ EM640FU8E.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| EM640FU8E | The function is 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM. Emerging Memory & Logic Solutions | |
| EM640FU8E | The function is 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM. Emerging Memory & Logic Solutions | |
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