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부품번호 | K3918 기능 |
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기능 | MOSFET ( Transistor ) - 2SK3918 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3918
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3918 is N-channel MOS FET device that
www.DataSheet4U.cfoematures a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3918
2SK3918-ZK
TO-251 (MP-3)
TO-252 (MP-3ZK)
FEATURES
• Low on-state resistance
RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low Ciss: Ciss = 1300 pF TYP.
• 5 V drive available
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
25
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±48
±192
Total Power Dissipation (TC = 25°C)
PT1 29
Total Power Dissipation
PT2 1.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg −55 to +150
IAS 22
EAS 48
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17077EJ3V0DS00 (3rd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
2004
2SK3918
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
VGS = 10 V
150
100
50 5.0 V
www.DataSheet4U.com
Pulsed
0
0123
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
4
VDS = 10 V
ID = 1 mA
3
2
1
0
-100
-50 0 50 100 150
Tch - Channel Temperature - °C
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
Pulsed
15
VGS = 5.0 V
10
10 V
5
0
1 10 100 1000
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000
100 Tch = −55°C
25°C
10 75°C
125°C
150°C
1
0.1
0.01
0
VDS = 10 V
Pulsed
12345
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
25°C
75°C
125°C
10 150°C
1
0.1
0.1
VDS = 10 V
Pulsed
1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
10
ID = 24 A
5
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
4 Data Sheet D17077EJ3V0DS
4페이지 PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3)
Mold Area
6.6 ±0.2
5.3 TYP.
4.3 MIN.
4
2.3 ±0.1
0.5 ±0.1
123
1.14 MAX.
www.DataSheet4U.com
No Plating
0.76 ±0.1
2.3 TYP.
2.3 TYP.
0.5 ±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
2SK3918
2) TO-252 (MP-3ZK)
6.5±0.2
5.1 TYP.
4.3 MIN.
4
2.3±0.1
0.5±0.1
No Plating
123
1.14 MAX.
2.3 2.3
No Plating
0.76±0.12
0 to 0.25
0.5±0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
Data Sheet D17077EJ3V0DS
7
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