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부품번호 | IRL1404LPBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 11 페이지수
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
www.DataSheet4U.com l Fully Avalanche Rated
l Lead-Free
Description
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted)
www.irf.com
G
PD - 95148
IRL1404SPbF
IRL1404LPbF
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004Ω
S ID = 160A
D2Pak
IRL1404S
TO-262
IRL1404L
Max.
160
110
640
3.8
200
1.3
± 20
520
95
20
5.0
-55 to + 175
300 (1.6mm from case)
Typ.
–––
0.50
–––
Max.
0.75
–––
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
04/19/04
IRL1404S/LPbF
10000
8000
www.DataSheet4U.com 6000
VGS = 0V, f = 1MHz
CCirssss
=
=
CCggds
+
Cgd ,
Cds
SHORTED
Coss = Cds + Cgd
Ciss
4000
2000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 95A
16
VDS = 32V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 100 200 300 400 500
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
TJ = 25° C
1 VGS = 0 V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
10us
100us
100
1ms
TTJC
=
=
25 ° C
175 ° C
Single Pulse
10
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRL1404S/LPbF
www.DataSheet4U.com
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
RG
VGS
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
7
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL1404LPBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |