DataSheet.es    


PDF STP6NA80 Data sheet ( Hoja de datos )

Número de pieza STP6NA80
Descripción N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



Hay una vista previa y un enlace de descarga de STP6NA80 (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! STP6NA80 Hoja de datos, Descripción, Manual

STP6NA80
STP6NA80FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST P 6NA 80
www.DataSheet4U.ScoTmP 6NA 80 F I
VDSS
800 V
800 V
R DS( on)
< 1.9
< 1.9
ID
5.7 A
3.4 A
s TYPICAL RDS(on) = 1.68
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain-gate Voltage (RG S = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM() Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
November 1996
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Val ue
STP6NA80
STP6NA80FI
800
800
± 30
5.7 3.4
3.6 2.1
23 23
125 45
1 0.36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10

1 page




STP6NA80 pdf
Transconductance
STP6NA80/FI
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
5/10

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet STP6NA80.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
STP6NA80N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSTMicroelectronics
STMicroelectronics
STP6NA80Trans MOSFET N-CH 800V 5.7A 3-Pin(3+Tab) TO-220New Jersey Semiconductor
New Jersey Semiconductor
STP6NA80FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSTMicroelectronics
STMicroelectronics
STP6NA80FITrans MOSFET N-CH 800V 3.4A 3-Pin(3+Tab) ISOWATT220New Jersey Semiconductor
New Jersey Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar