|
|
Datasheet P5NK80Z-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
P5N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | P5N50 | IXTP5N50P
Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTA 5N50P IXTP 5N50P IXTY 5N50P
VDSS = 500 V = 4.8 A ID25 RDS(on) ≤ 1.4 Ω
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25  IXYS Corporation data | | |
| 2 | P5N50C | 5 Ampere 500 Volt N-Channel MOSFET P5N50C
®
Pb Free Plating Product
P5N50C
5 Ampere 500 Volt N-Channel MOSFET
{
̻
Pb
Features
̰ ̰ ̰ ̰ ̰
RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
ඔ
2. Drain
BVDSS = 500V
̵
1. Gate
{
RDS(ON) = 1.5 ohm I  Thinki Semiconductor mosfet | | |
| 3 | P5N60FI | STP5N60FI Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
 STMicroelectronics data | | |
| 4 | P5N80 | FQP5N80 FQP5N80
FQP5N80
800V N-Channel MOSFET
September 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state  Fairchild Semiconductor data | | |
| 5 | P5NA60FI | STP5NA60FI STP5NA60 STP5NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP5NA60 STP5NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 1.6 Ω < 1.6 Ω
ID 5.3 A 3.4 A
TYPICAL RDS(on) = 1.35 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o STMicroelectronics data | | |
| 6 | P5NA80 | STP5NA80 ( )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
STP5NA80 STP5NA80FI
VDSS
800 V 800 V
RDS(on)
< 2.4 Ω < 2.4 Ω
ID
4.7 A 2.8 A
s TYPICAL RDS(on) = 1.8 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPET STMicroelectronics data | | |
| 7 | P5NA80FI | STSTP5NA80FI ( )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP5NA80 STP5NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) < 2.4 Ω < 2.4 Ω
ID 4.7 A 2.8 A
TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED  ST Microelectronics data | |
| Esta página es del resultado de búsqueda del P5NK80Z-PDF.HTML. Si pulsa el resultado de búsqueda de P5NK80Z-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |