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PDF TLP848 Data sheet ( Hoja de datos )
| Número de pieza | TLP848 | |
| Descripción | PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TLP848 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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TOSHIBA Photointerrupter Infrared LED + Phototransistor
TLP848
TLP848
○ Camera Module for Mobile Phone
○ Digital Still Camera and Video Camera
○ Personal Equipment and Small-sized OA Equipment
The TLP848 is a surface-mount photointerrupter which is composed of a
GaAs infrared LED and a Si phototransistor.
It is an ultra compact package. Moreover it has a wider gap width than
www.DataSheet14mU.mcomgap width of industry-standard and has a high resolution.
• Ultra compact package : 2.8×1.9×2.5mm (typ.)
• Surface-mount type
• Lead(Pb)-Free
• Gap width : 1.2mm (typ.)
• High resolution : Slit width 0.3 mm (typ.)
• High current transfer ratio : IC/IF = 3% (min)
• Material of the package : PPS (Polyphenylene sulfide)
(UL94V-0)
TOSHIBA
11-3B1
Weight: 0.017 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Marking (Note 2)
Characteristics
Symbol
Rating
Unit
Weekly Code
Forward current
Forward current derating (Ta>25°C)
Reverse voltage
Collector-emitter voltage
Emitter-collector voltage
Collector power dissipation
Collector power dissipation derating
(Ta>25℃)
IF
ΔIF/°C
VR
VCEO
VECO
PC
ΔPC/°C
30
−0.33
5
15
5
75
−1
mA
mA/°C
V
V
V
mW
mW/°C
Collector current
Operating temperature range
Storage temperature range
Soldering temperature
(Note 1)
IC
Topr
Tstg
Tsol
50
−30 to 85
−40 to 100
250
mA
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The reflow time and the example of temperature profile are shown in the section entitled Mounting Method.
Note 2: Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
1 2007-10-01
1 page  
Mounting Methods
1. The example of temperature profile (reflow soldering)
TLP848
www.DataSheet4U.com
180°C
160°C
4°C/s max (*)
250°C max (*)
4°C/s max (*)
10 s max (*)
230°C
60∼120 s
30∼50 s
Time (s) →
(*)The product is evaluated using above reflow soldering conditions. No additional test is performed
exceed the condition (i.e. the condition more than MAX values) as an evaluation.
Please perform reflow soldering under the above conditions.
• The first reflow process should be performed under the above temperature profile within 168 h
after opening the bag.
• If a second reflow process needs to be performed, it should be performed within 168 h of the first
reflow under the above temperature profile.
• Storage conditions before the second reflow process: 30°C, 70% RH (max)
• Do not perform wave soldering and manual soldering with a soldering iron.
2. Recommended soldering pattern
Unit: mm
1.0
1.5
3. Cleaning
When cleaning is required after soldering, Toshiba recommends the following cleaning solvents.
It is confirmed that these solvents have no effect on semiconductor devices in our dipping test
(under the recommended conditions).
In selecting the one for your actual usage, please perform sufficient review on washing condition,
using condition and etc.
ASAHI CLEAN AK-225AES
KAO CLEAN TROUGH 750H
PINE ALPHA ST-100S
TOSHIBA TECHNOCARE
(FRW-17, FRW-1, FRV-100)
: (made by ASAHI GLASS)
: (made by KAO)
: (made by ARAKAWA CHEMICAL)
: (made by GE TOSHIBA SILICONES)
5 2007-10-01
5 Page 
Detection position
characteristics (1)
(typ.)
1.2
IF = 5mA
VCE = 2V
1 Ta = 25°C
−+
0
0.8
d
0.6
Shutter
0.4
Detection position
0.2 d = 0 ± 0.2mm
www.DataSheet4U.com 0
-1.2 -0.8 -0.4 0 0.4 0.8 1.2
Distance d (mm)
TLP848
1.2
1
0.8
0.6
0.4
0.2
0
-2
Detection position
characteristics (2)
(typ.)
IF = 5mA
VCE = 2V
Ta = 25°C
Shutter
d
Detection position
d = 0.75
+0.6
-0.5
mm
-1 0 1 2 3 4
Distance d (mm)
Relative Positioning of Shutter and Device
For normal operation, position the shutter and the device as shown in the figure below. By considering the
device's detection direction characteristic and switching time, determine the shutter slit width and pitch.
Shutter
A
A’
Unit: mm
Center of sensor
Cross section between A and A'
11 2007-10-01
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet TLP848.PDF ] | |
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