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HAT2165N 데이터시트 PDF




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부품번호 HAT2165N 기능
기능 Silicon N Channel Power MOS FET Power Switching
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HAT2165N 데이터시트, 핀배열, 회로
HAT2165N
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
www.DataSheet4U.cCoampable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 2.8 mtyp. (at VGS = 10 V)
Outline
LFPAK-i
5678
DDDD
4
G
1(S)
2(S)
3(S)
4(G)
SSS
12 3
8(D)
7(D)
6(D)
5(D)
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Preliminary
Rev.0.01
Jul.15.2004
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
θch-C
Tch
Tstg
Ratings
30
±20
55
220
55
30
90
(30)
(4.17)
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.0.01, Jul.15.2004, page 1 of 6




HAT2165N pdf, 반도체, 판매, 대치품
HAT2165N
www.DataSheet4U.com
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
6
4 V GS = 4.5 V
I D = 10 A, 20 A
50 A
2 10 V
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 100 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I DR (A)
Dynamic Input Characteristics
40
I D = 55 A
VGS
30
VDD = 25 V
VDD = 5 V
10 V
25 V
16
12
20
VDS
10 V
10
5V
8
4
0
0 20 40 60 80 100
Gate Charge Qg (nc)
1000
Forward Transfer Admittance vs.
Drain Current
300
100 Tc = -25°C
30
10 75°C
3 25°C
1
0.3
0.1
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30 VGS = 0
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V DS (V)
1000
Switching Characteristics
300
100 t d(off)
30 t f
t d(on)
10
tr
3 VGS = 10 V , VDS = 10 V
Rg = 4.7 , duty < 1 %
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I D (A)
Rev.0.01, Jul.15.2004, page 4 of 6

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HAT2165N 전자부품, 판매, 대치품
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www.DataSheet4U.coKemep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0

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