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HAT2183WP 데이터시트 PDF




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부품번호 HAT2183WP 기능
기능 Silicon N Channel Power MOS FET Power Switching
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HAT2183WP 데이터시트, 핀배열, 회로
HAT2183WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G0530-0500
Rev.5.00
Oct 21, 2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
20
40
20
40
20
30
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Oct 21, 2005, page 1 of 6




HAT2183WP pdf, 반도체, 판매, 대치품
HAT2183WP
Static Drain to Source on State Resistance
vs. Temperature
0.20 VGS = 10 V
Pulse Test
0.16
0.12
ID = 20 A
10 A
5A
0.08
www.DataSheet4U.com
0.04
0
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di / dt = 100 A / µs
2 VGS = 0, Ta = 25°C
1
1 3 10 30 100 300 1000
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
240
ID = 20 A
VDD = 30 V
180 60 V
120 V
VGS
16
12
120 VDS
8
60
VDD = 120 V
4
60 V
30 V
0
0 8 16 24 32 40
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = 25°C
10
3 75°C
25°C
1
0.3
VDS = 10 V
0.1 Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
300
100 Coss
30
Crss
10
3
1
0 50 100 150
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
tf
VGS = 10 V, VDD = 75 V
PW = 5 µs, duty 1 %
RG = 10
100 td(off)
td(on)
10
tr
tr
tf
1
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Rev.5.00, Oct 21, 2005, page 4 of 6

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HAT2183WP 전자부품, 판매, 대치품
www.DataSheet4U.com
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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information before purchasing a product listed herein.
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Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .4.0

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HAT2183WP

Silicon N Channel Power MOS FET Power Switching

Renesas Technology
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