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PDF 06N03 Data sheet ( Hoja de datos )

Número de pieza 06N03
Descripción 25V N-Channel Enhancement Mode MOSFET
Fabricantes Pan Jit International　
Logotipo Pan Jit International Logotipo



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No Preview Available ! 06N03 Hoja de datos, Descripción, Manual

PJD06N03
25V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=6mΩ
• RDS(ON), VGS@4.5V,IDS@30A=9mΩ
• Advanced trench process technology
• High Density Cell Design For Uitra Low On-Resistance
www.DataSheet4•US.cpoemcially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-252 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 06N03
TO-252
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=27A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA =25OC
TA =75OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
VDS
VGS
ID
ID M
PD
T ,T
J STG
EAS
RθJ C
RθJ A
Limit
25
+20
60
280
62.5
37.5
-55 to + 150
180
2.0
50
Uni ts
V
V
A
A
W
OC
mJ
O C /W
O C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1

1 page





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