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부품번호 | AT202 기능 |
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기능 | PHASE CONTROL THYRISTOR | ||
제조업체 | Ansaldo | ||
로고 | |||
전체 4 페이지수
ANSALDO
Ansaldo Trasporti s.p.a.
Unita' Semiconduttori
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY
Tel. int. +39/(0)10 6556549 - (0)10 6556488
Fax Int. +39/(0)10 6442510
Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
TARGET SPECIFICATION
Feb 97 - ISSUE : 03
AT202
Repetitive voltage up to
Mean on-state current
Surge current
800 V
635 A
6 kA
www.DSaytamSbhoeel t4U.cComharacteristic
Conditions
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
V DRM
Repetitive peak off-state voltage
I RRM
Repetitive peak reverse current
V=VRRM
I DRM
Repetitive peak off-state current
V=VDRM
CONDUCTING
I T (AV)
Mean on-state current
180° sin, 50 Hz, Th=55°C, double side cooled
I T (AV)
Mean on-state current
180° sin, 50 Hz, Tc=85°C, double side cooled
I TSM
Surge on-state current
sine wave, 10 ms
I² t I² t
without reverse voltage
V T On-state voltage
On-state current = 800 A
V T(TO)
Threshold voltage
r T On-state slope resistance
SWITCHING
di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 450 A, gate 10V 5ohm
dv/dt
Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM
td Gate controlled delay time, typical VD=100V, gate source 10V, 10 ohm , tr=.5 µs
tq
Circuit commutated turn-off time, typical
dV/dt = 20 V/µs linear up to 75% VDRM
Q rr Reverse recovery charge
di/dt=-20 A/µs, I= 290 A
I rr Peak reverse recovery current
VR= 50 V
I H Holding current, typical
VD=5V, gate open circuit
I L Latching current, typical
VD=5V, tp=30µs
GATE
V GT
Gate trigger voltage
VD=5V
I GT Gate trigger current
VD=5V
V GD
Non-trigger gate voltage, min.
VD=VDRM
V FGM
Peak gate voltage (forward)
I FGM
Peak gate current
V RGM
Peak gate voltage (reverse)
P GM
Peak gate power dissipation
Pulse width 100 µs
P G Average gate power dissipation
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T j Operating junction temperature
F Mounting force
Mass
ORDERING INFORMATION : AT202 S 08
standard specification
VDRM&VRRM/100
Tj
[°C] Value Unit
150 800
150 900
150 800
150 30
150 30
V
V
V
mA
mA
635 A
575 A
150 6
kA
180 x1E3 A²s
150 1.19
V
150 0.8
V
150 0.490
mohm
150 320
150 500
25 1.6
200
150
25 300
25 700
A/µs
V/µs
µs
µs
µC
A
mA
mA
25 3.5
25 200
150 0.25
20
8
5
75
1
V
mA
V
V
A
V
W
W
95
20
-30 / 150
4.9 / 5.9
55
°C/kW
°C/kW
°C
kN
g
AT202 PHASE CONTROL THYRISTOR
TARGET SPECIFICATION Feb 97 - ISSUE : 03
ON-STATE CHARACTERISTIC
Tj = 150 °C
ANSALDO
SURGE CHARACTERISTIC
Tj = 150 °C
2000
1800
1600
1400
1200
www.DataSheet4U.com
1000
800
600
400
200
0
0.6
1.1 1.6
On-state Voltage [V]
6
5
4
3
2
1
0
1 10 100
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
0.001
0.01
0.1 1
t[s]
10 100
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03
mm and roughness < 2 µm.
In the interest of product improvement ANSALDO reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |