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부품번호 | LH28F008SCT-12 기능 |
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기능 | Flash Memory 8M (1M bb8) | ||
제조업체 | Sharp Electrionic Components | ||
로고 | |||
전체 49 페이지수
PRODUCT SPECIFICATIONS
®
Integrated Circuits Group
LH28F008SCT-L12
Flash Memory
8M (1M ×8)
(Model No.: LHF08CH3)
Spec No.: EL104164B
Issue Date: May 7, 1999
SHAi?P
LHF08CH3
2
LH28FOOSSCT-L12
8M-BIT (1 MB x 8)
SmartVoltage Flash MEMORY
n SmartVoltage Technology
- 2.7V(Read-Only), 3.3V or 5V Vcc
- 3.3V, 5V or 12V Vpp
n Automated Byte Write and Block Erase
- Command User Interface
- Status Register
n High-Performance Read Access Time
- 120ns(5V*0.5V), 150ns(3.3V*O.3V),
170ns(2.7V-3.6V)
n Operating Temperature
- 0°C to +7O”C
I High-Density Symmetrically-Blocked
Architecture
- Sixteen 64K-byte Erasable Blocks
I Low Power Management
- Deep Power-Down Mode
- Automatic Power Savings Mode
Decreases Ice in Static Mode
I Enhanced Data Protection Features
- Absolute Protection with Vpp=GND
- Flexible Block Locking
- Block Erase/Byte Write Lockout
during Power Transitions
n Enhanced Automated Suspend Options
- Byte Write Suspend to Read
- Block Erase Suspend to Byte Write
- Block Erase Suspend to Read
n Extended Cycling Capability
- 100,000 Block Erase Cycles
- 1.6 Million Block Erase Cycles/Chip
n SRAM-Compatible Write Interface
n Industry-Standard Packaging
- 40-Lead TSOP
n ETOXTM* Nonvolatile Flash Techno WY
W CMOS Process
(P-type silicon substrate)
n Not designed or rated as radiation
hardened
SHARP’s LH28F008SCT-L12 Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
?ead/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SlMMs and memory
:ards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F008SCT-L12 offers three levels of protection: absolute protection with V,, at
ZND, selective hardware block locking, or flexible software block locking. These alternatives give designers
Jltimate control of their code security needs.
The LH28F008SCT-L12 is manufactured on SHARP’s 0.38um ETOXTM process technology. It come in
ndustry-standard package: the 40-lead TSOP, ideal for board constrained applications. Based on the 28F008SA
architecture, the LH28F008SCT-L12 enables quick and easy upgrades for designs demanding the state-of-the-art.
‘ETOX is a trademark of Intel Corporation.
Rev. 1.3
4페이지 SHARP
LHF08CH3
5
Figure 1. Block Diagram
49
Ale
A17
A16
AIS
A14
An
A12 40-LEAD TSOP
CE#
vcc STANDARD PINOUT
VPP 1Omm x 20mm
RP# TOP VIEW
41
Alo
As
43
A7
A6
A5
A4
Figure 2. TSOP 40-Lead Pinout
NC
NC
WE#
OE#
RY/BY#
DQ7
DQ6
DQ5
DQ4
VCC
GND
GND
DQ3
DQ2
DQI
DQo
z
A2
A3
Rev. 1.0
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
LH28F008SCT-12 | Flash Memory 8M (1M bb8) | Sharp Electrionic Components |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |