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PDF 2N6056 Data sheet ( Hoja de datos )
| Número de pieza | 2N6056 | |
| Descripción | NPN Darlington Silicon Power Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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ON Semiconductort
NPN Darlington Silicon Power
Transistor
. . . designed for general–purpose amplifier and low frequency
switching applications.
• High DC Current Gain —
hFE = 3000 (Typ) @ IC = 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min)
www.DataSheet4•U.Lcoomw Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc
= 3.0 Vdc (Max) @ IC = 8.0 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRange
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Indicates JEDEC Registered Data
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Max
80
80
5.0
8.0
16
120
100
0.571
–65 to +200
Symbol
RθJC
Max
1.75
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
_C
Unit
_C/W
100
2N6056
ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
CASE 1–07
TO–204AA
(TO–3)
80
60
40
20
0
0 25 50 75 100 125 150 175 200
TC, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
2N6056/D
1 page  
2N6056
20,000
10,000
VCE = 3.0 V
5000 TJ = 150°C
3000
2000
25°C
1000
500 -ā55°C
300
200
0.1
www.DataSheet4U.com
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 8. DC Current Gain
3.0
2.6
IC = 2.0 A 4.0 A
2.2
6.0 A
TJ = 25°C
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IB, BASE CURRENT (mA)
20 30
Figure 9. Collector Saturation Region
3.0
TJ = 25°C
2.5
2.0
1.5 VBE @ VCE = 3.0 V
VBE(sat) @ IC/IB = 250
1.0
0.5
0.1
VCE(sat) @ IC/IB = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltage
5.0 7.0 10
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N6056.PDF ] | |
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