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Número de pieza | BUK7225-55A | |
Descripción | TrenchMOS standard level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BUK7225-55A
TrenchMOS™ standard level FET
Rev. 01 — 17 April 2001
M3D300
Product specification
1. Description
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N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™1 technology, featuring very low on-state resistance.
Product availability:
BUK7225-55A in SOT428 (D-PAK).
2. Features
s TrenchMOS™ technology
s Q101 compliant
s 175 °C rated
s Standard level compatible.
3. Applications
s Automotive and general purpose power switching:
x 12 V and 24 V loads
c
c x Motors, lamps and solenoids.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
mb
3 source (s)
mb drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
Symbol
d
g
MBB076
s
1. TrenchMOS is a trademark of Royal Philips Electronics.
1 page Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
www.DataSheVetG4SU(.tcho) m
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 175 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 175 °C
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDD = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω;
measured from drain to
centre of die
Ls internal source inductance measured from source lead
to source bond pad
BUK7225-55A
TrenchMOS™ standard level FET
Min Typ Max Unit
55 − − V
50 − − V
234V
1−−V
− − 4.4 V
−
0.05 10
µA
− − 500 µA
− 2 100 nA
− 21 25 mΩ
− − 50 mΩ
−
980
1310
pF
− 240 290 pF
− 150 210 pF
− 11 − ns
− 56 − ns
− 38 − ns
− 31 − ns
− 2.5 − nH
− 7.5 − nH
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
© Philips Electronics N.V. 2001. All rights reserved.
5 of 13
5 Page Philips Semiconductors
11. Data sheet status
BUK7225-55A
TrenchMOS™ standard level FET
Data sheet status [1]
Objective data
Preliminary data
Product data
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Product status [2] Definition
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
9397 750 08222
Product specification
Rev. 01 — 17 April 2001
© Philips Electronics N.V. 2001 All rights reserved.
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