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PDF BUK7214-75B Data sheet ( Hoja de datos )
| Número de pieza | BUK7214-75B | |
| Descripción | Standard Level Fet | |
| Fabricantes | NXP Semiconductors | |
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BUK7214-75B
TrenchMOS™ standard level FET
Rev. 01 — 26 January 2004
M3D300
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 185 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V, 24 V, and 42 V loads
s General purpose power switching.
1.4 Quick reference data
s EDS(AL)S ≤ 133 mJ
s ID ≤ 70 A
s RDSon = 12.6 mΩ (typ)
s Ptot ≤ 167 W.
2. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 drain (d)
[1]
mb
3 source (s)
mb mounting base;
connected to
drain (d)
2
13
Top view
MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
Symbol
d
g
MBB076
s
1 page  
Philips Semiconductors
BUK7214-75B
TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS
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VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
gate-source threshold voltage ID = 1 mA; VDS = VGS;
Figure 9
IDSS
IGSS
RDSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
Tj = 25 °C
Tj = 185 °C
Tj = −55 °C
VDS = 75 V; VGS = 0 V
Tj = 25 °C
Tj = 185 °C
VGS = ±20 V; VDS = 0 V
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Dynamic characteristics
Tj = 25 °C
Tj = 185 °C
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Ld
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
VGS = 10 V; VDS = 60 V;
ID = 25 A; Figure 14
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
VDS = 25 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
measured from drain to
center of die
Ls internal source inductance measured from source lead
to source bond pad
Source-drain diode
VSD source-drain (diode forward) IS = 25 A; VGS = 0 V;
voltage
Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs
Qr recovered charge
VGS = −10 V; VDS = 30 V
Min
75
70
2
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Unit
--V
--V
34
--
- 4.4
0.02 1
- 500
2 100
V
V
V
µA
µA
nA
12.6
-
41
9
15
1 959
326
159
18
114
52
45
2.5
7.5
14
33
-
-
-
2 612
391
218
-
-
-
-
-
-
mΩ
mΩ
nC
nC
nC
pF
pF
pF
nS
nS
nS
nS
nH
nH
0.85 1.2
74 -
94 -
V
ns
nC
9397 750 12231
Product data
Rev. 01 — 26 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 12
5 Page 
Philips Semiconductors
BUK7214-75B
TrenchMOS™ standard level FET
9. Data sheet status
Level Data sheet status[1]
I Objective data
Product status[2][3]
Development
II Preliminary data
Qualification
III Product data
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Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
11. Disclaimers
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
12. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
9397 750 12231
Product data
Rev. 01 — 26 January 2004
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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