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PDF STD4N20 Data sheet ( Hoja de datos )
| Número de pieza | STD4N20 | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD4N20
N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK
MESH OVERLAY™ MOSFET
TYPE
VDSS
RDS(on)
ID
STD4N20
200 V < 1.5 Ω
4A
www.DataSheet4Us.coTmYPICAL RDS(on) = 1.2 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2001
Value
200
200
±20
4
2.5
16
40
0.32
5
–65 to 150
150
(1)ISD ≤4A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/9
1 page  
STD4N20
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD4N20.PDF ] | |
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