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부품번호 | STD40NF06 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 9 페이지수
STD40NF06
N-CHANNEL 60V - 0.024 Ω - 40A DPAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD40NF06
60 V <0.028 Ω 40 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.024 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL , AUDIO AMPLIFIERS
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
EAS(2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Operating Junction Temperature
(•) Pulse width limited by safe operating area.
January 2003
Value
60
60
± 20
40
28
160
85
0.57
10
250
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤40A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 20 A, VDD = 30 V
1/9
STD40NF06
Output Characteristics
www.DataSheet4U.com
Transconductance
Transfer Characteristics
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9
4페이지 DIM.
A
A1
A2
www.DataSheet4U.com
B
B2
C
C2
D
E
G
H
L2
L4
STD40NF06
TO-252 (DPAK) MECHANICAL DATA
MIN.
2.2
0.9
0.03
0.64
5.2
0.45
0.48
6
6.4
4.4
9.35
0.6
mm
TYP.
0.8
MAX.
2.4
1.1
0.23
0.9
5.4
0.6
0.6
6.2
6.6
4.6
10.1
1
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.023
inch
TYP.
0.031
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
H
DETAIL "A"
L2 D
DETAIL "A"
L4
0068772-B
7/9
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ STD40NF06.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STD40NF02L | N-CHANNEL STripFET POWER MOSFET | ST Microelectronics |
STD40NF02L | N-CHANNEL POWER MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |