|
|
PDF STD40NF06LZ Data sheet ( Hoja de datos )
| Número de pieza | STD40NF06LZ | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STD40NF06LZ (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
STD40NF06LZ
N-CHANNEL 60V - 0.020 Ω - 40A DPAK
Zener-Protected STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD40NF06LZ
60 V < 25 mΩ 40 A
www.DataSheet4Us.coTmYPICAL RDS(on) = 0.020Ω
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s LOGIC LEVEL GATE DRIVE
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
s BUILT-IN ZENER DIODES TO IMPROVE ESD
PROTECTION UP TO 2kV
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITOTS,
COMPUTER AND INDUSTRIAL
APPLICATION
s WELDING EQUIPMENT
s AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-source ESD(HBM-C=100pF, R=15kΩ)
dv/dt(1) Peak Diode Recovery voltage slope
EAS(2)
Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
60
60
± 16
40
28
160
100
0.67
± 2.5
9
450
Unit
V
V
V
A
A
A
W
W/°C
kV
V/ns
mJ
-55 to 175
°C
((12))ISSDta≤rt4in0gAT, dj =i/d2t5≤1oC00AI/Dµs=,
VDD
20A
≤
V(BR)DSS, Tj
VDD = 45V
≤
TJMAX.
October 2002
.
1/8
1 page  
Normalized Gate Threshold Voltage vs Temperature
STD40NF06LZ
Normalized on Resistance vs Temperature
www.DataSheet4U.com
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STD40NF06LZ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STD40NF06LZ | N-CHANNEL POWER MOSFET |  ST Microelectronics |
| STD40NF06LZ | N-CHANNEL POWER MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |