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PDF STP4NK50ZD Data sheet ( Hoja de datos )
| Número de pieza | STP4NK50ZD | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD4NK50ZD - STD4NK50ZD-1
STF4NK50ZD - STP4NK50ZD
N-channel 500V - 2.4Ω - 3A - TO-220 - TO-220FP- DPAK - IPAK
Fast diode SuperMESH™ Power MOSFET
General features
www.DataSheet4U.com Type
VDSS RDS(on) ID Pw
STD4NK50ZD-1 500V <2.7Ω 3A 45W
STD4NK50ZD 500V <2.7Ω 3A 45W
STF4NK50ZD 500V <2.7Ω 3A 20W
STP4NK50ZD 500V <2.7Ω 3A 45W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeability
Description
The fast SuperMESH™ series associates all
advantages of reduced on-resistance, zener gate
protection and outstanding dc/dt capability with a
Fast body-drain recovery diode. Such series
complements the FDmesh™ advanced tecnology.
Applications
■ Switching application
3
2
1
TO-220
3
1
DPAK
IPAK
3
2
1
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD4NK50ZD-1
STD4NK50ZD
STF4NK50ZD
STP4NK50ZD
Marking
D4NK50ZD-1
D4NK50ZD
F4NK50ZD
P4NK50ZD
Package
IPAK
DPAK
TO-220FP
TO-220
April 2006
Rev 3
Packaging
Tube
Tape & reel
Tube
Tube
1/17
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17
1 page  
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Electrical characteristics
www.DataSheet4U.com
Table 7. Source drain diode
Symbol
Parameter
Test condictions
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 3A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 3A,
di/dt = 100A/µs,
VDD = 34V, Tj = 25°C
trr
Qrr
IRRM
Reverse recovery time
Reverse Recovery Charge
Reverse recovery current
ISD = 3A,
di/dt = 100A/µs,
VDD = 34V, Tj = 150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
3A
12 A
1.6 V
73
140
3.82
ns
nC
A
118 ns
260 nC
4.4 A
Table 8. Gate-source zener diode
Symbol
Parameter
Test condictions Min. Typ. Max Unit
BVGSO(1)
Gate-source braekdown
voltage
IGS = ±1mA (open drain) 30
V
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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5 Page 
STD4NK50ZD - STD4NK50ZD-1 - STF4NK50ZD - STP4NK50ZD
Package mechanical data
www.DataSheet4U.com
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/17
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| PDF Descargar | [ Datasheet STP4NK50ZD.PDF ] | |
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