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부품번호 | STD4NK80Z-1 기능 |
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기능 | N-channel MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 18 페이지수
STP4NK80Z - STP4NK80ZFP
STD4NK80Z - STD4NK80Z-1
N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
General features
www.DataSheet4U.com Type
STP4NK80Z
STP4NK80ZFP
STD4NK80Z
STD4NK80Z-1
VDSS
(@Tjmax)
800 V
800 V
800 V
800 V
RDS(on)
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
ID
3A
3A
3A
3A
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■ Switching application
TO-220
3
2
1
TO-220FP
3
1
DPAK
IPAK
3
2
1
Internal schematic diagram
Order codes
Part number
STP4NK80Z
STP4NK80ZFP
STD4NK80ZT4
STD4NK80Z-1
Marking
P4NK80Z
P4NK80ZFP
D4NK80Z
D4NK80Z
Package
TO-220
TO-220FP
DPAK
IPAK
Packaging
Tube
Tube
Tape & reel
Tube
August 2006
Rev 8
1/18
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18
Electrical ratings
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
www.DataSheet4U.com
1.1
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
3
190
Unit
A
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30
V
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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4페이지 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Electrical characteristics
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-
220/DPAK/IPAK
Figure 2. Thermal impedance for TO-
220/DPAK/IPAK
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Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characterisics
Figure 6. Transfer characteristics
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부품번호 | 상세설명 및 기능 | 제조사 |
STD4NK80Z-1 | N-channel MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |