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PDF AO6603 Data sheet ( Hoja de datos )
| Número de pieza | AO6603 | |
| Descripción | Complementary Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
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AO6603
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6603 uses advanced trench technology to
www.DataSheet4pUr.ocovmide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6603 is Pb-free (meets ROHS
& Sony 259 specifications). AO6603L is a Green
Product ordering option. AO6603 and AO6603L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 20V
-30V
ID = 1.7 (VGS = 4.5V) -2.5A
RDS(ON)
< 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V)
< 290mΩ (VGS = 2.5V) < 185mΩ (VGS = 2.5V)
< 425mΩ (VGS = 1.8V) < 265mΩ (VGS = 1.8V)
TSOP6
Top View
G1 1 6
S2 2 5
G2 3 4
D1
S1
D2
D1 D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain CurrentB
ID
IDM
1.7
1.4
15
Power Dissipation
TA=25°C
TA=70°C
PD
1.15
0.73
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-30
±12
-2.3
-1.8
-30
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-AmbientA
t ≤ 10s
Maximum Junction-to-AmbientA
Steady-State
Maximum Junction-to-LeadC
Steady-State
Symbol
RθJA
RθJL
Typ
78
106
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
1 page  
AO6603
P-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
IGSS
VGS(th)
ID(ON)
www.DataSheet4U.com
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±12V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.3A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
Forward Transconductance
VDS=-5V, ID=-2.3A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=-4.5V, VDS=-15V, ID=-2.5A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-15V, RL=6Ω,
tD(off)
Turn-Off DelayTime
RGEN=6Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-2.5A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-2.5A, dI/dt=100A/µs
Min
-30
-0.6
-10
Typ Max Units
-1
-5
±100
-1 -1.4
107 135
135
195
8
-0.85
185
265
-1
-1.35
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
409 pF
55 pF
42 pF
12 Ω
0.72 nC
1.34 nC
4.8 nC
8.5 ns
10 ns
55 ns
25.5 ns
26 ns
15.6 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any ngivaepnplaicpaptiloicnatdioenpednedpsenodnsthoen uthseru'ssespr'escsifpicecbioficarbdodaerdsigdne.siTghne. Tchuerrecnutrrreantitnrgatisinbgaisebdasoendthoen tt≤he10t≤s 1th0esrmthaelrmreaslisrteasniscteance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.R5
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev2: August 2005
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AO6603.PDF ] | |
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