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PDF STP15NM65N Data sheet ( Hoja de datos )
| Número de pieza | STP15NM65N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF15NM65N-STI15NM65N-STW15NM65N
STB15NM65N-STP15NM65N
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247
Second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on) Max
ID
STB15NM65N
STF15NM65N
STI15NM65N
STP15NM65N
STW15NM65N
710 V
710 V
710 V
710 V
710 V
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
< 0.27 Ω
15.5 A
15.5 A(1)
15.5 A
15.5 A
15.5 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STI15NM65N
STF15NM65N
STP15NM65N
STB15NM65NT4
STW15NM65N
Marking
15NM65N
15NM65N
15NM65N
15NM65N
15NM65N
Package
I²PAK
TO-220FP
TO-220
D²PAK
TO-247
Packaging
Tube
Tube
Tube
Tape & reel
Tube
September 2007
Rev 1
1/18
www.st.com
18
1 page  
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Electrical characteristics
www.DataSheet4U.com
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD =325 V, ID = 7.75 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min Typ Max Unit
25 ns
8 ns
80 ns
26 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15.5 A, VGS = 0
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 25 °C
(see Figure 20)
ISD = 15.5 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
15.5 A
62 A
1.3 V
460 ns
6 µC
27 A
600 ns
8 µC
27 A
5/18
5 Page 
STB15NM65N-STI15NM65N-STF15NM65N-STP/W15NM65N
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/18
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