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PDF STP14NM65N Data sheet ( Hoja de datos )
| Número de pieza | STP14NM65N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB14NM65N, STF14NM65N
STI14NM65N,STP14NM65N,STW14NM65N
N-channel 650 V, 0.33 Ω, 12 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, D2PAK, I2PAK, TO-247
Features
www.DataSheet4U.com Type
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
VDSS
(@TJmax)
710 V
710 V
710 V
710 V
710 V
RDS(on)
max
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
< 0.38 Ω
ID
12 A
12 A
12 A(1)
12 A
12 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a
new vertical structure to the Company’s strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high efficiency
converters.
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STI14NM65N
STB14NM65N
STF14NM65N
STP14NM65N
STW14NM65N
Marking
14NM65N
14NM65N
14NM65N
14NM65N
14NM65N
Package
I²PAK
D²PAK
TO-220FP
TO-220
TO-247
Packaging
Tube
Tape and reel
Tube
Tube
Tube
October 2008
Rev 2
1/18
www.st.com
18
1 page  
STB/F/I/P/W14NM65N
Electrical characteristics
www.DataSheet4U.com
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD =325 V, ID = 6 A
RG = 4.7 Ω VGS = 10 V
(see Figure 18)
Min Typ Max Unit
11 ns
13 ns
55 ns
20 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, TJ = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
12
48
1.3
390
5
25
530
7
25
A
A
V
ns
µC
A
ns
µC
A
5/18
5 Page 
STB/F/I/P/W14NM65N
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
0.645
L30 28.90
1.137
∅P 3.75
3.85
0.147
0.151
Q 2.65
2.95
0.104
0.116
11/18
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| PDF Descargar | [ Datasheet STP14NM65N.PDF ] | |
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