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What is STU7NB90I?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STU7NB90I Datasheet PDF - STMicroelectronics

Part Number STU7NB90I
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STU7NB90
STU7NB90I
N-CHANNEL 900V - 1.1 - 7.3 A Max220/Max220I
PowerMesh™ MOSFET
TYPE
VDSS
RDS(on)
ID
STU7NB90
900 V < 1.45 7.3 A
www.DataSheet4U.cSoTmU7NB90I
900 V < 1.45 7.3 A
s TYPICAL RDS(on) = 1.1
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
23
1
Max220
Max220I
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2001
Value
Unit
STU7NB90
STU7NB90I
900 V
900 V
±30 V
7.3
7.3 (*)
A
4.6
4.6 (*)
A
29.2
29.2 (*)
A
170 60 W
1.36
0.47 W/°C
4 V/ns
-
2500
V
–65 to 150
°C
150 °C
(1) ISD 7.3 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*) Current Limited by Package
1/9

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STU7NB90I equivalent
Gate Charge vs Gate-source Voltage
STU7NB90 - STU7NB90I
Capacitance Variations
www.DataSheet4U.com
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9


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Featured Datasheets

Part NumberDescriptionMFRS
STU7NB90The function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics
STU7NB90IThe function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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