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PDF STP16NM50N Data sheet ( Hoja de datos )
| Número de pieza | STP16NM50N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB16NM50N - STF/I16NM50N
STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET
D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
(@Tjmax) max
ID
STB16NM50N
STI16NM50N
STF16NM50N
STP16NM50N
STW16NM50N
550 V
550 V
550 V
550 V
550 V
0.26 Ω
0.26 Ω
0.26 Ω
0.26 Ω
0.26 Ω
15 A
15 A
15 A (1)
15 A
15 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB16NM50N
B16NM50N
STI16NM50N
I16NM50N
STF16NM50N
F16NM50N
STP16NM50N
STW16NM50N
P16NM50N
W16NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
March 2008
Rev 2
1/18
www.st.com
18
1 page  
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Electrical characteristics
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Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 250 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min. Typ Max Unit
20 ns
15 ns
60 ns
16 ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ Max Unit
ISD
ISDM
VSD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 15 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =15 A, di/dt =100 A/µs,
VDD = 100 V
(see Figure 23)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 15 A
Tj = 150 °C (see Figure 23)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
15
60
1.3
400
5
24
500
6
24
A
A
V
ns
µC
A
ns
µC
A
5/18
5 Page 
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
Package mechanical data
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TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.48
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/18
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STP16NM50N.PDF ] | |
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