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Número de pieza | STU9NC90ZI | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STU9NC90ZI (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! STU8NC90Z
STU8NC90ZI
N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STU8NC90Z
www.DataSheet4U.cSoTmU9NC90ZI
900 V
900 V
< 1.38Ω
< 1.38Ω
7A
7A
s TYPICAL RDS(on) = 1.1Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
23
1
Max220
I-Max220
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
Value
STU8NC90Z
STU8NC90ZI
900
900
±25
7 7(*)
4.4 4.4(*)
28 28(*)
160
1.28
55
0.44
±50
4
3
-- 2000
–65 to 150
150
(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
1/10
1 page Transconductance
STU8NC90Z/STU8NC90ZI
Static Drain-source On Resistance
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/10
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet STU9NC90ZI.PDF ] |
Número de pieza | Descripción | Fabricantes |
STU9NC90Z | N-channel Power MOSFET | STMicroelectronics |
STU9NC90ZI | N-channel Power MOSFET | STMicroelectronics |
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