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부품번호 | STP10NM65N 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 17 페이지수
STD10NM65N - STF10NM65N
STP10NM65N - STU10NM65N
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
(@Tjmax) max
ID
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
710 V
710 V
710 V
710 V
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
< 0.48 Ω
9A
9 A(1)
9A
9A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
TO-220FP
3
2
1
IPAK
3
1
DPAK
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
STD10NM65N
STF10NM65N
STP10NM65N
STU10NM65N
Marking
10NM65N
10NM65N
10NM65N
10NM65N
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape & reel
Tube
Tube
Tube
February 2008
Rev 2
1/17
www.st.com
17
Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
2 Electrical characteristics
www.DataSheet4U.com
(TCASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
dv/dt (1) Drain source voltage slope
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
drain current (VGS = 0)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS = 0
650
VDD= 520 V, ID= 9 A,
VGS= 10 V
VDS = max rating
VDS = max rating, @125 °C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
2
VGS = 10 V, ID = 4.5 A
V
25 V/ns
1 µA
100 µA
±100 nA
34
0.43 0.48
V
Ω
1. Characteristics value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS=15 V, ID = 4.5 A
VDS = 50 V, f = 1 MHz,
VGS = 0
7.5 S
pF
850
pF
53
pF
4
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0 to 520 V
90
pF
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 520 V, ID = 9 A,
VGS = 10 V,
(see Figure 19)
25 nC
14 nC
4 nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
4페이지 STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
Electrical characteristics
Figure 8. Output characteristics
Figure 9. Transfer characteristics
www.DataSheet4U.com
Figure 10. Transconductance
Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs gate source voltage Figure 13. Capacitance variations
7/17
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STP10NM65N | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |