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부품번호 | STU3N62K3 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 19 페이지수
STB3N62K3, STD3N62K3, STF3N62K3
STP3N62K3, STU3N62K3
N-channel 620 V, 2.2 Ω , 2.7 A SuperMESH3™ Power MOSFET
D2PAK, DPAK, TO-220FP, TO-220, IPAK
Features
www.DataSheet4U.com Type
VDSS
RDS(on)
max
ID
Pw
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
620 V
620 V
620 V
620 V
620 V
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
< 2.5 Ω
2.7 A
2.7 A
2.7 A(1)
2.7 A
2.7 A
45 W
45 W
20 W
45 W
45 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
IPAK
3
2
1
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Application
■ Switching applications
Description
The new SuperMESH3™ series is obtained
through the combination of a further fine tuning of
ST's well established strip-based PowerMESH™
layout with a new optimization of the vertical
structure. In addition to reducing on-resistance
significantly versus previous generation, special
attention has been taken to ensure a very good
dv/dt capability and higher margin in breakdown
voltage for the most demanding application.
Table 1. Device summary
Order codes
Marking
STB3N62K3
STD3N62K3
STF3N62K3
STP3N62K3
STU3N62K3
6N62K3
6N62K3
6N62K3
6N62K3
6N62K3
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
July 2008
Rev 1
1/19
www.st.com
19
Electrical characteristics
2 Electrical characteristics
STB/D/F/P/U3N62K3
www.DataSheet4U.com
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.4 A
Min. Typ. Max. Unit
620 V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
2.2 2.5 Ω
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 1.4 A
2.1 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
385
55
6
pF
pF
pF
COSS
(1)
eq
Equivalent output
capacitance
VGS = 0, VDS = 0 to 496 V
32.3 pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
10 Ω
Qg Total gate charge
VDD = 496 V, ID = 2.7 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 17)
13 nC
2.5 nC
7.5 nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 310 V, ID =1.7 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min.
Typ.
9
6.8
22
15.6
Max Unit
ns
ns
ns
ns
4/19
4페이지 STB/D/F/P/U3N62K3
Electrical characteristics
Figure 8. Normalized BVDSS vs temperature Figure 9. Static drain-source on resistance
www.DataSheet4U.com
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
7/19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
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STU3N62K3 | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |