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Número de pieza | H5N2003P | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N2003P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! H5N2003P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
www.DataSheet4U•.comHigh speed switching
Outline
TO-3P
D
G
S
1
2
3
REJ03G0235-0100Z
Rev.1.00
Apr.09.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
60
240
60
240
40
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
(Ta = 25°C)
Rev.1.00, Apr.09.2004, page 1 of 6
1 page H5N2003P
200
Reverse Drain Current vs.
Source to Drain Voltage
160
www.DataSheet4U.com
120
VGS = 0 V
80
40 10 V
5V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch − c(t) = γ s (t) • θ ch − c
θch − c = 0.833°C/W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 100 V
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
Rev.1.00, Apr.09.2004, page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet H5N2003P.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N2003P | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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