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부품번호 | H5N2505DS 기능 |
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기능 | Silicon N Channel MOS FET High Speed Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
www.DataSheet•4U.cHoimgh speed switching
• Low gate change
• Avalanche ratings
REJ03G1107-0300
Rev.3.00
Oct 16, 2006
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Value
250
±30
5
20
5
20
5
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.3.00 Oct 16, 2006 page 1 of 7
H5N2505DL, H5N2505DS
www.DataSheet4U.com
Static Drain to Source on State Resistance
vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6 2 A
1.2 ID = 5 A
0.8
0.4
1A
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
5
di / dt = 100 A / µs
2 VGS = 0, Ta = 25°C
1
1 3 10 30 100 300 1000
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
400
ID = 5 A
VDD = 200 V
300 100 V
50 V
16
VGS
12
VDS
200
8
100 VDD = 200 V
100 V
50 V
4
0
0 4 8 12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
30
10 Tc = −25°C
3
1
75°C
25°C
0.3
VDS = 10 V
0.1 Pulse Test
0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000
3000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
300 Ciss
100
30 Coss
10
Crss
3
1
0 50 100 150
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
VGS = 10 V, VDD = 125 V
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
100 tf
td(off)
tr
tf
td(on)
10
tr
1
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Rev.3.00 Oct 16, 2006 page 4 of 7
4페이지 H5N2505DL, H5N2505DS
Ordering Information
Part Name
Quantity
Shipping Container
H5N2505DL-E
3200 pcs
Box (Sack)
H5N2505DSTL-E
3000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
www.DataSheet4U.com
Rev.3.00 Oct 16, 2006 page 7 of 7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ H5N2505DS.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
H5N2505DL | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H5N2505DS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |