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PDF H5N2508DL Data sheet ( Hoja de datos )
| Número de pieza | H5N2508DL | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R DS (on) = 0.48 Ω typ.
www.DataSheet•4U.cLoomw leakage current: IDSS = 1 µA max (at VDS = 250 V)
• High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
• Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
• Avalanche ratings
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
1 page  
H5N2508DL, H5N2508DS
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
www.DataSheet4U.com
4
10 V
2 5V
VGS = 0 V
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
ID = 10 mA
4 1 mA
3
0.1 mA
2
1
VDS = 10 V
0
–50 0
50
100 150 200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 125 V
Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
Rev.2.00 Sep 07, 2005 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet H5N2508DL.PDF ] | |
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| H5N2508DL | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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