H5N2515P Datasheet PDF - Renesas Technology
| Part Number | H5N2515P | |
| Description | Silicon N Channel MOS FET High Speed Power Switching | |
| Manufacturers | Renesas Technology | |
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H5N2515P
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
www.DataSheet•4U.cHoimgh speed switching
Outline
TO-3P
D
G
S
1
2
3
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G0413-0100
Rev.1.00
Sep.28.2004
1. Gate
2. Drain (Flange)
3. Source
Ratings
250
±30
55
165
55
165
19
22.5
200
0.625
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Sep.28.2004, page 1 of 3
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H5N2515P electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ H5N2515P.PDF Datasheet ] | |
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| Part Number | Description | MFRS |
| H5N2515P | The function is Silicon N Channel MOS FET High Speed Power Switching. Renesas Technology | |
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