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부품번호 | H5N2517FN 기능 |
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기능 | Silicon N Channel MOS FET High Speed Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
H5N2517FN
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
www.DataSheet•4U.cHoimgh speed switching
Outline
TO-220FN
D
G
S
REJ03G0371-0100Z
Rev.1.00
May.28.2004
1. Gate
2. Drain
3. Source
1
23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
250
±30
20
80
20
80
7
3.0
30
4.17
150
–55 to +150
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
(Ta = 25°C)
Unit
Rev.1.00, May.28.2004, page 1 of 7
H5N2517FN
www.DataSheet4U.com
Static Drain to Source on State Resistance
vs. Temperature
0.200
Pulse Test
V GS = 10 V
0.160
0.120
0.080
0.040
I D = 20 A
17.5 A
10 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 100 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500
I D= 20 A
400 V DS = 50 V
100 V
200 V
VGS
300
VDD
200
20
16
12
8
100
V DS = 200 V
4
100 V
50 V
0
0 20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
25°C
5
2 75°C
1
V DS = 10 V
0.5 Pulse Test
0.2
0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50 100
10000
5000
2000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1000
500
Coss
200
100
50 Crss
20
10
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Switching Characteristics
10000
VGS = 10 V, V DD = 125 V
PW = 5 µs, duty < 1 %
RG=10 Ω
1000
tf
tr
t d(off)
100
tf
10
0.1
tr
0.3 1 3
Drain Current
t d(on)
10 30 100
ID (A)
Rev.1.00, May.28.2004, page 4 of 7
4페이지 H5N2517FN
Package Dimensions
TO-220FN
EIAJ Package Code
JEDEC Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
10 ± 0.3
2.8 ± 0.2
www.DataSheet4U.com
2.54 ± 0.25
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Symbol
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Dimension in Millimeters
Min Typ
Max
Ordering Information
Part Name
Quantity
Shipping Container
H5N2517FN-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00, May.28.2004, page 7 of 7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
H5N2517FN | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |