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부품번호 | H7N0401LM 기능 |
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기능 | Silicon N Channel MOS FET High Speed Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
H7N0401LD, H7N0401LS, H7N0401LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1129-0500
(Previous: ADE-208-1527C)
Rev.5.00
Apr 07, 2006
Features
• Low on-resistance
www.DataSheet4U.cRoDmS (on) = 3.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0401LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
H7N0401LS
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0401LM
S
Rev.5.00 Apr 07, 2006 page 1 of 8
H7N0401LD, H7N0401LS, H7N0401LM
www.DataSheet4U.com
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8 ID = 10, 20, 50 A
6
VGS = 4.5 V
4
2 10 V
10, 20, 50 A
0
–50 0
50 100 150 200
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
1000
di / dt = 100 A / µs
500 VGS = 0, Ta = 25°C
200
100
50
20
10
12
5 10 20 50 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 95 A
20
80
60
VDS
40
VDD = 10 V
25 V
40 V
16
VGS
12
8
20
VDD = 40 V
4
25 V
10 V
00
0 40 80 120 160 200
Gate Charge Qg (nc)
Forward Transfer Admittance vs.
Drain Current
1000
300 Tc = –25°C
100
30 25°C
75°C
10
3 VDS = 10 V
Pulse Test
1
1 3 10 30 100 300 1000
Drain Current ID (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
3000
1000
Coss
300
VGS = 0
f = 1 MHz
100
0 10
20
Crss
30 40
50
Drain to Source Voltage VDS (V)
1000
500
Switching Characteristics
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
Rg = 4.7 Ω
200
100 tf
50
20
td(off)
tr
td(on)
10
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Rev.5.00 Apr 07, 2006 page 4 of 8
4페이지 H7N0401LD, H7N0401LS, H7N0401LM
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
Previous Code MASS[Typ.]
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
1.40g
www.DataSheet4U.com
10.2 ± 0.3
2.54 ± 0.5
1.3 ± 0.2
1.37 ± 0.2
0.86
+
–
0.2
0.1
0.76 ± 0.1
2.54 ± 0.5
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
Unit: mm
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
Previous Code
MASS[Typ.]
PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V
1.30g
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Unit: mm
Rev.5.00 Apr 07, 2006 page 7 of 8
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ H7N0401LM.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
H7N0401LD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0401LM | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |