|
|
|
부품번호 | H7N0603DL 기능 |
|
|
기능 | Silicon N Channel MOS FET High Speed Power Switching | ||
제조업체 | Renesas Technology | ||
로고 | |||
H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
• Low on - resistance
RDS (on) = 11 mΩ typ.
www.DataSheet•4U.cLoomw drive current
• Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
3. Source
G
12 3
4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Tch = 25°C, Rg ≥ 50Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8
H7N0603DL, H7N0603DS
Static Drain to State Resistance
vs. Temperature
50
Pulse Test
40
www.DataSheet4U.com
30
20
4.5 V
5, 10, 20 A
10
VGS = 10 V
0
–50 0
5, 10, 20 A
50 100
Case Temperature Tc (°C)
150
1000
300
100
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
30
10
3
1
0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
ID = 30 A
VGS
80
20
16
60
VDS
VDD = 50 V
25 V
10 V
12
40 8
20
VDD = 50 V
4
25 V
10 V
0
0 20 40 60 80 100
Reverse Drain Current Qg (nc)
Forward Transfer Admittance vs.
Drain Current
100
Tc = –40°C
10
1 25°C
0.1 150°C
0.01
0.001
0.0001 0.001 0.01 0.1
VDS = 10 V
Pulse Test
1 10 100
Drain Current ID (A)
10000
3000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1000
300 Coss
100 Crss
30 VGS = 0
f = 1 MHz
10
0 10 20 30 40
Drain to Source Voltage VDS
50
(V)
1000
Switching Characteristics
300 tf
100
td(off)
tr
td(on)
30
tr
10
tf
VGS = 10 V, VDD = 30 V
3 PW = 5 µs, duty < 1 %
Rg = 4.7 Ω
1
0.1 0.3 1 3 10 30
Drain Current ID (A)
100
Rev.2.00, Jan.26.2005, page 4 of 8
4페이지 H7N0603DL, H7N0603DS
Package Dimensions
• H7N0603DL
JEITA Package Code
RENESAS Code
PRSS0004ZD-B
Previous Code
DPAK(L)-(2) / DPAK(L)-(2)V
MASS[Typ.]
0.42g
www.DataSheet4U.com
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.15 ± 0.1
0.8 ± 0.1
(0.7)
1.2 ± 0.3
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
0.55 ± 0.1
• H7N0603DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
6.5 ± 0.5
5.4 ± 0.5
(0.1)
(0.1)
2.3 ± 0.2
0.55 ± 0.1
(5.1)
1.0 Max.
2.29 ± 0.5
(1.2)
0.8 ± 0.1
2.29 ± 0.5
0 – 0.25
0.55 ± 0.1
Unit: mm
Unit: mm
Rev.2.00, Jan.26.2005, page 7 of 8
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ H7N0603DL.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
H7N0603DL | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0603DS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |