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PDF H7N0607DL Data sheet ( Hoja de datos )
| Número de pieza | H7N0607DL | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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H7N0607DL, H7N0607DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 26 mΩ typ.
www.DataSheet•4U.cLoomw drive current.
• Capable of 4.5 V gate drive
Outline
REJ03G0124-0300
Rev.3.00
Jan.27.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
G 3. Source
12 3
4. Drain
S
12 3
H7N0607DS
H7N0607DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note3
EAR Note3
PchNote2
Tch
Tstg
Rating
60
±20
20
80
20
8
5.48
25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mj
W
°C
°C
Rev.3.00, Jan.27.2005, page 1 of 8
1 page  
H7N0607DL, H7N0607DS
Reverse Drain Current vs.
Source to Drain Voltage
25
10 V
20
15
5V
Maximum Avalanche Energy vs.
Channel Temperature Derating
8.0
IAP = 8 A
VDD = 25V
6.4 duty < 0.1 %
Rg > 50 Ω
4.8
10 3.2
www.DataSheet4U.com
VGS = 0, –5 V
5
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1.6
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
10
D=1
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
3 0.5
0.2
1
0.1
0.3 0.05
0.02
0.1 0.01
0.03
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 3.125°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • I AP2•
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
Rev.3.00, Jan.27.2005, page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet H7N0607DL.PDF ] | |
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