(PDF) H7N0608FM Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	H7N0608FM
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! H7N0608FM Silicon N Channel MOS FET Power Switching www.DataSheet4U.com Features • Low on-resistance RDS(on) = 6.5 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220FM REJ03G0165-0100Z Rev.1.00 Dec.04.2003 D G S 123 1. Gate 2. Drain 3. Source Rev.1.00, Dec.04.2003, page 1 of 9 1 page H7N0608FM Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 Pulse Test 400 ID = 50 A 300 www.DataSheet4U.com 200 100 20 A 10 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 30 10 VGS = 4.5 V 10 V 3 1 1 3 10 30 100 300 1000 Drain Current ID (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 12 50 A 10, 20 A 8 4.5 V 4 VGS = 10 V 10, 20, 50 A 0 –50 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) 1000 300 100 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Tc = –40°C 30 25°C 10 150°C 3 1 0.3 0.10.1 0.3 1 3 10 30 Drain Current ID (A) 100 Rev.1.00, Dec.04.2003, page 5 of 9 5 Page

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PDF H7N0608FM Data sheet ( Hoja de datos )