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Número de pieza | H7N0608LD | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H7N0608LD (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0144-0100Z
Rev.1.00
Oct.30.2003
Features
• Low on-resistance
RDS(on) = 6.0 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
3
1
2
H7N0608LS H7N0608LM
3
H7N0608LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Oct.30.2003, page 1 of 11
1 page H7N0608LD, H7N0608LS, H7N0608LM
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300 ID = 50 A
200
20 A
100
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10 VGS = 4.5 V
10 V
3
1
1 3 10 30 100 300 1000
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12 50 A
10, 20 A
8 4.5 V
4 10, 20, 50 A
VGS = 10 V
0
–50 –25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
300
100
Forward Transfer Admittance vs.
Drain Current
VDS = 10 V
Pulse Test
Tc = –40°C
30
25°C
10
150°C
3
1
0.3
0.10.1
0.3 1 3 10 30
Drain Current ID (A)
100
Rev.1.00, Oct.30.2003, page 5 of 11
5 Page H7N0608LD, H7N0608LS, H7N0608LM
• H7N0608LM
As of January, 2003
Unit: mm
10.2 ± 0.3
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
2.54 ± 0.5
1.37 ± 0.2
0.86
+
–
0.2
0.1
2.54 ± 0.5
2.49 ± 0.2
0.1
+
–
0.2
0.1
0.4 ± 0.1
7.8
6.6
2.2
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (S)-(2)
—
—
1.35 g
Rev.1.00, Oct.30.2003, page 11 of 11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet H7N0608LD.PDF ] |
Número de pieza | Descripción | Fabricantes |
H7N0608L | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0608LD | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0608LM | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H7N0608LS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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