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PDF HAT2132H Data sheet ( Hoja de datos )

Número de pieza HAT2132H
Descripción Silicon N Channel Power MOS FET Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! HAT2132H Hoja de datos, Descripción, Manual

HAT2132H
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low drive current.
Low on-resistance
www.DataSheet4U.cLoomw profile
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK )
5
1 234
4
G
5
D
S SS
1 23
REJ03G0177-0300
Rev.3.00
Dec 07, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IDR(pulse) Note1
IAP Note3
EAR Note3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
6
24
6
24
6
2.4
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Dec 07, 2006 page 1 of 6

1 page




HAT2132H pdf
HAT2132H
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
www.DataSheet4U.com
4
10 V
2 5V
VGS = 0
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
5
VDS = 10 V
4
ID = 10 mA
1 mA
3
2 0.1 mA
1
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PDM
D = PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Switching Time Waveform
Vin Monitor
10
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDD
= 100 V
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.3.00 Dec 07, 2006 page 5 of 6

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