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PDF STD8NM60N Data sheet ( Hoja de datos )
| Número de pieza | STD8NM60N | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD8NM60N - STD8NM60N-1
STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK
second generation MDmesh™ Power MOSFET
Features
www.DataSheet4U.com Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
650 V
650 V
650 V
650 V
<0.65 Ω
<0.65 Ω
<0.65 Ω
<0.65 Ω
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STD8NM60N
STD8NM60N-1
STF8NM60N
STP8NM60N
D8NM60N
D8NM60N-1
F8NM60N
P8NM60N
Package
DPAK
IPAK
TO-220FP
TO-220
Packaging
Tape & reel
Tube
Tube
Tube
January 2008
Rev 2
1/17
www.st.com
17
1 page  
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Electrical characteristics
www.DataSheet4U.com
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18),
(see Figure 23)
10
12
40
10
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V, Tj = 25
°C (see Figure 20)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7A, di/dt = 100
A/µs, VDD = 30 V,
Tj=150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Typ.
310
2.40
15
480
3.50
15
Max. Unit
7A
28 A
1.3 V
ns
µC
A
ns
µC
A
5/17
5 Page 
STD8NM60N - STD8NM60N-1 - STF8NM60N - STP8NM60N
Package mechanical data
www.DataSheet4U.com
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
b 0.61
0.88
0.024
0.034
b1 1.14
1.70
0.044
0.066
c 0.49
0.70
0.019
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
E 10
10.40
0.393
0.409
e 2.40
2.70
0.094
0.106
e1 4.95
5.15
0.194
0.202
F 1.23
1.32
0.048
0.051
H1 6.20
6.60
0.244
0.256
J1 2.40
2.72
0.094
0.107
L 13
14 0.511
0.551
L1 3.50
3.93
0.137
0.154
L20 16.40
L30 28.90
0.645
1.137
∅P 3.75
Q 2.65
3.85
2.95
0.147
0.104
0.151
0.116
11/17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STD8NM60N.PDF ] | |
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