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PDF ON1113 Data sheet ( Hoja de datos )
| Número de pieza | ON1113 | |
| Descripción | Transmissive Photosensors | |
| Fabricantes | Panasonic Semiconductor | |
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Transmissive Photosensors (Photo lnterrupters)
CNA1011K (ON1113)
Photo lnterrupter
For contactless SW, object detection
Mark for indicating
LED side φ1.5
Unit: mm
■ Overview
CNA1011K is a small size photocoupler package consisting of a
high efficiency GaAs infrared light emitting diode used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element.
■ Features
13.6
A
7.0±0.2
5.0±0.2
0.4
Device
center
19.2
13.0±0.15
0.45±0.15
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
thick plate detection
www.DataShe•eFt4aUst.creosmponse: tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
3
50
75
30
Unit
V
mA
mW
V
A'
(10.1)
4- 0.45
2-2.0
2-φ3.2±0.2
(2.54)
SEC. A-A'
23
1: Anode
2: Cathode
3: Collector
14
4: Emitter
PISTR104-012 Package
(Note) 1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
100 mW
Temperature Operating ambient temperature Topr −25 to +85 °C
Storage temperature
Tstg −30 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at
Ta ≥ 25°C.
*2: Output power derating ratio is 1.34 mW/°C
at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
VF
characteristics Reverse current
IR
Terminal capacitance
Ct
Output
Collector-emitter cutoff current ICEO
characteristics (Base open)
Collector-emitter capacitance CC
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
Fall time *
tr
tf
IF = 50 mA
VR = 3 V
VR = 0 V, f = 1 MHz
VCE = 10 V
VCE = 10 V, f = 1 MHz
VCC = 10 V, IF = 20 mA, RL = 100 Ω
IF = 50 mA, IC = 0.1 mA
VCC = 10 V, IC = 1 mA
RL = 100 Ω
1.2 1.5 V
10 µA
35 pF
200 nA
5 pF
0.3 mA
0.5 V
6 µs
6 µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
50 Ω
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
tr : Rise time
90% tf : Fall time
10%
tr tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00018BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ON1113.PDF ] | |
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