|
|
Datasheet SIHFI9630G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SiHFI9630G | Power MOSFET, Transistor IRFI9630G, SiHFI9630G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 29 5.4 15 Single
S
FEATURES
• Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to L | Vishay Siliconix | mosfet |
SiH Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | SiHA12N60E | Power MOSFET, Transistor www.vishay.com
SiHA12N60E
Vishay Siliconix
E Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
58 6 13 Single
0.38
ORDERING INFORMATION
Packa Vishay | ||
2 | SiHA14N60E | Power MOSFET, Transistor www.vishay.com
SiHA14N60E
Vishay Siliconix
E Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
64 8 13 Single
0.269
ORDERING INFORMATION
Pack Vishay | ||
3 | SiHA15N60E | Power MOSFET, Transistor www.vishay.com
SiHA15N60E
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
76 11 17 Single
0.28
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
FEATURES • Low figure-of Vishay | ||
4 | SiHA21N60EF | EF Series Power MOSFET www.vishay.com
SiHA21N60EF
Vishay Siliconix
EF Series Power MOSFET with Fast Body Diode
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
84 14 24 Single
0.176
O Vishay | ||
5 | SiHA21N65EF | E Series Power MOSFET www.vishay.com
SiHA21N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
106 14 33 Single
0.18
OR Vishay | ||
6 | SIHA22N60AE | MOSFET, Transistor www.vishay.com
SiHA22N60AE
Vishay Siliconix
E Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
96 12 25 Single
0.156
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
FEATURES • Low figure Vishay | ||
7 | SiHA22N60E | E Series Power MOSFET www.vishay.com
SiHA22N60E
Vishay Siliconix
E Series Power MOSFET
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max (). at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
650 VGS = 10 V
86 11 24 Single
0.18
FEATURES • Low figure-o Vishay |
Esta página es del resultado de búsqueda del SIHFI9630G. Si pulsa el resultado de búsqueda de SIHFI9630G se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |