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Datasheet K3N5VU1000F-DGC Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K3N5VU1000F-DGC | 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM K3N5V(U)1000F-D(G)C
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/sing |  Samsung Semiconductor | cmos |
K3N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K3N4C1000D-DC | 8M-Bit CMOS Mask ROM K3N4C1000D-D(G)C
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operati  Samsung Electronics cmos | | |
| 2 | K3N4C1000D-GC | 8M-Bit CMOS Mask ROM K3N4C1000D-D(G)C
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operati Samsung Electronics cmos | | |
| 3 | K3N4C1000D-TC | 8M-Bit CMOS Mask ROM K3N4C1000D-TC(E)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operat Samsung Electronics cmos | | |
| 4 | K3N4C1000D-TE | 8M-Bit CMOS Mask ROM K3N4C1000D-TC(E)
8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operat Samsung Electronics cmos | | |
| 5 | K3N5V1000D-TC | 16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM K3N5V(U)1000D-TC
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.) • Ful Samsung Semiconductor cmos | | |
| 6 | K3N5V1000F-DC | 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM K3N5V(U)1000F-D(G)C
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/sing Samsung Semiconductor cmos | | |
| 7 | K3N5V1000F-DGC | 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM K3N5V(U)1000F-D(G)C
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM
FEATURES
• Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Operation : 120ns(Max.)@CL=100pF • Supply voltage : single +3.0V/sing Samsung Semiconductor cmos | |
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